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Role of negatively charged defects in the lattice contraction of Al-Si-N
C. A. Pignedoli, D. Passerone, H. J. Hug, A. Pélisson-Schecker, and J. Patscheider
APPLIED PHYSICS LETTERS 96, 071908 (2010)
Experiments reveal that incorporation of substitutional Si in wurtzite AlN up to 6 at. % results in a lattice contraction in the [0001] direction. The contraction is linear and, for higher silicon con
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Molecular Jigsaw: Pattern Diversity Encoded by Elementary Geometrical Features
C. Rohr, M. Balbas Gambra, K. Gruber, E. C. Constable, E. Frey, T. Franosch,| and B. A. Hermann
Nano Letters
Scanning tunneling microscopy (STM) images of self-organized monolayers of Fre´chet dendrons display a variety of twodimensional ordering motifs, which are influenced by engineering the molecular inte
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