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Direct Stencil Type Lithography: The Nanostencil Technique
The Nanostencil is a resistless proximal probe-based lithography technique [1,2], which
enables the direct patterning of complex and submicron-sized structures of various materials.
The method is based on a combination of SPM and the shadow masking technique, whereby
structures are locally deposited through openings in membranes positioned closely to the
sample (Figure 1). Predefined lateral movements of the sample relative to the mask lead to the
direct fabrication of arbitrary structures on the surface. Complex line patterns with line
widths down to 40 nm can be made (Figure 2). The masks are made by the focused ion beam (FIB)
technique, which allows cutouts to be fabricated down to a width of 30 nm in silicon nitride
membranes.
The Nanostencil project will be pursued in the second phase of the NCCR in order to extend
the direct stencil type lithography down to the atomic scale using atomic/molecular
manipulation techniques and to measure the electrical properties of these structures.
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Figure 1: Schematic 3d view of the stencil setup with the sample mounted below
the piezo tube scanner and the mask positioned below the sample. The evaporation
source is located at the bottom (not shown). |
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Figure 2: Copper lines with a width of 40 nm fabricated on a silicon wafer surface
by the stenciling technique. |
[1] |
Parallel nanodevice fabrication using a combination of shadow mask and scanning probe methods
Roli Lüthi, Reto R. Schlittler, Jürgen Brugger, Peter Vettiger, Mark E. Welland and James K. Gimzewski
Applied Physics Letters, Volume 75, Issue 9, pp. 1314-1316
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[2] |
All-in-one static and dynamic nanostencil atomic force microscopy/scanning tunneling microscopy system
Percy Zahl, Martin Bammerlin, Gerhard Meyer, and Reto R. Schlittler
Rev. Sci. Instrum. 76, 023707 (2005)
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Contact:
Gerhard Meyer |
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IBM Research Laboratory
Rüschlikon, Switzerland
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